onsemi-FDT1600N10ALZ - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	5.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	5V, 10V
Rds On (Max) @ Id, Vgs:	160mOhm @ 2.8A, 10V
Vgs(th) (Max) @ Id:	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	3.77 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	225 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	10.42W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	SOT-223-4
Package / Case:	TO-261-4, TO-261AA

onsemi FDT1600N10ALZ