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| Part Number | FDS8880 | FDS8884 | FDU8880 | FDS8882 | FDS8870 |
|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | Fairchild Semiconductor | onsemi | onsemi |
| Product Status | Active | Active | Obsolete | Obsolete | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V | 30 V | 30 V | 30 V | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 11.6A (Ta) | 8.5A (Ta) | 13A (Ta), 58A (Tc) | 9A (Ta) | 18A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 11.6A, 10V | 23mOhm @ 8.5A, 10V | 10mOhm @ 35A, 10V | 20mOhm @ 9A, 10V | 4.2mOhm @ 18A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 3V @ 250µA | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 30 nC @ 10 V | 13 nC @ 10 V | 31 nC @ 10 V | 20 nC @ 10 V | 112 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1235 pF @ 15 V | 635 pF @ 15 V | 1260 pF @ 15 V | 940 pF @ 15 V | 4615 pF @ 15 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 2.5W (Ta) | 2.5W (Ta) | 55W (Tc) | 2.5W (Ta) | 2.5W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Through Hole | Surface Mount | Surface Mount |
| Supplier Device Package | 8-SOIC | 8-SOIC | I-PAK | 8-SOIC | 8-SOIC |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) | TO-251-3 Short Leads, IPak, TO-251AA | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC (0.154", 3.90mm Width) |
