FDS86242
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onsemi FDS86242

Manufacturer No:
FDS86242
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDS86242 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 150V 4.1A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:4.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:67mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:760 pF @ 75 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta), 5W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number FDS86242 FDS86252   FDS86240  
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 150 V 150 V 150 V
Current - Continuous Drain (Id) @ 25°C 4.1A (Ta) 4.5A (Ta) 7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 67mOhm @ 4.1A, 10V 55mOhm @ 4.5A, 10V 19.8mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 10 V 15 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 75 V 955 pF @ 75 V 2570 pF @ 75 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta), 5W (Tc) 2.5W (Ta), 5W (Tc) 2.5W (Ta), 5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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