onsemi-FDS8333C - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	4.1A, 3.4A
Rds On (Max) @ Id, Vgs:	80mOhm @ 4.1A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6.6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	282pF @ 10V
Power - Max:	900mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SOIC

onsemi FDS8333C