FDS5682
  • Share:

onsemi FDS5682

Manufacturer No:
FDS5682
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDS5682 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 7.5A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:21mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1650 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

-
246

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDS5682 FDS6682   FDS3682   FDS5672   FDS5680  
Manufacturer onsemi onsemi Fairchild Semiconductor onsemi onsemi
Product Status Obsolete Last Time Buy Obsolete Active Obsolete
FET Type N-Channel - N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) - MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V - 100 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta) - 6A (Ta) 12A (Tc) 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V - 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 21mOhm @ 7.5A, 10V - 35mOhm @ 6A, 10V 10mOhm @ 12A, 10V 20mOhm @ 8A, 10V
Vgs(th) (Max) @ Id 2V @ 250µA - 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V - 25 nC @ 10 V 45 nC @ 10 V 42 nC @ 10 V
Vgs (Max) ±20V - ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1650 pF @ 25 V - 1300 pF @ 25 V 2200 pF @ 25 V 1850 pF @ 15 V
FET Feature - - - - -
Power Dissipation (Max) 2.5W (Ta) - 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) - -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount - Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC - 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) - 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

2SJ305TE85LF
2SJ305TE85LF
Toshiba Semiconductor and Storage
MOSFET P-CH 30V 200MA SC59
IXTT30N60L2
IXTT30N60L2
IXYS
MOSFET N-CH 600V 30A TO268
IPD90N04S405ATMA1
IPD90N04S405ATMA1
Infineon Technologies
MOSFET N-CH 40V 86A TO252-3
STP20N65M5
STP20N65M5
STMicroelectronics
MOSFET N-CH 650V 18A TO220
STW10N105K5
STW10N105K5
STMicroelectronics
MOSFET N-CH 1050V 6A TO247
NTMFS4C022NT1G
NTMFS4C022NT1G
onsemi
MOSFET N-CH 30V 30A/136A 5DFN
SIHP17N80AEF-GE3
SIHP17N80AEF-GE3
Vishay Siliconix
E SERIES POWER MOSFET WITH FAST
NVMFS6H858NWFT1G
NVMFS6H858NWFT1G
onsemi
MOSFET N-CH 80V 8.4A/29A 5DFN
IRF6722MTR1PBF
IRF6722MTR1PBF
Infineon Technologies
MOSFET N-CH 30V 13A DIRECTFET
SPP15P10PGHKSA1
SPP15P10PGHKSA1
Infineon Technologies
MOSFET P-CH 100V 15A TO220-3
TK16J60W,S1VQ
TK16J60W,S1VQ
Toshiba Semiconductor and Storage
MOSFET N-CH 600V 15.8A TO3P
CPH3355-TL-W
CPH3355-TL-W
onsemi
MOSFET P-CH 30V 2.5A 3CPH

Related Product By Brand

MBR130T1G
MBR130T1G
onsemi
DIODE SCHOTTKY 30V 1A SOD123
MUR4100EG
MUR4100EG
onsemi
DIODE GEN PURP 1000V 4A DO201AD
NRTS6100TFSTXG
NRTS6100TFSTXG
onsemi
100V 6A TRENCH SCHOTTKY
1N5919BRL
1N5919BRL
onsemi
DIODE ZENER 5.6V 3W AXIAL
NTD4863N-35G
NTD4863N-35G
onsemi
MOSFET N-CH 25V 9.2A/49A IPAK
NGTB20N120IHRWG
NGTB20N120IHRWG
onsemi
IGBT TRENCH/FS 1200V 40A TO247
J108_D27Z
J108_D27Z
onsemi
JFET N-CH 25V 625MW TO92
MC14018BDG
MC14018BDG
onsemi
IC COUNTER DIV N PRESET 16SOIC
MC74LVX373DTR2G
MC74LVX373DTR2G
onsemi
IC LATCH TRANSP OCT 3ST 20-TSSOP
NCP13992ACDR2G
NCP13992ACDR2G
onsemi
IC OFFLINE SW HALF-BRDG 16SOIC
NCP4569DM33R2
NCP4569DM33R2
onsemi
IC REG LINEAR FIXED LDO REG
NCV8535MN150R2G
NCV8535MN150R2G
onsemi
IC REG LINEAR 1.5V 500MA 10DFN