FDS4685
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onsemi FDS4685

Manufacturer No:
FDS4685
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDS4685 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 40V 8.2A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:8.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:27mOhm @ 8.2A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:27 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1872 pF @ 20 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number FDS4685 FDS6685   FDS4675  
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Active Obsolete Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 40 V 30 V 40 V
Current - Continuous Drain (Id) @ 25°C 8.2A (Ta) 8.8A (Ta) 11A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 27mOhm @ 8.2A, 10V 20mOhm @ 8.8A, 10V 13mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 27 nC @ 5 V 24 nC @ 5 V 56 nC @ 4.5 V
Vgs (Max) ±20V ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1872 pF @ 20 V 1604 pF @ 15 V 4350 pF @ 20 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.4W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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