FDS4435
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onsemi FDS4435

Manufacturer No:
FDS4435
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDS4435 Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 8.8A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 8.8A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:24 nC @ 5 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1604 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number FDS4435 FDS4435A   FDS4465  
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Obsolete Obsolete Active
FET Type P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V 20 V
Current - Continuous Drain (Id) @ 25°C 8.8A (Ta) 9A (Ta) 13.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 20mOhm @ 8.8A, 10V 17mOhm @ 9A, 10V 8.5mOhm @ 13.5A, 4.5V
Vgs(th) (Max) @ Id 3V @ 250µA 2V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 5 V 30 nC @ 5 V 120 nC @ 4.5 V
Vgs (Max) ±25V ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 1604 pF @ 15 V 2010 pF @ 15 V 8237 pF @ 10 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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