FDS3672
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onsemi FDS3672

Manufacturer No:
FDS3672
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDS3672 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 7.5A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:7.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:23mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2015 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
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Similar Products

Part Number FDS3672 FDS3692   FDS5672   FDS3682   FDS2672   FDS3572   FDS3612   FDS3670  
Manufacturer onsemi onsemi onsemi Fairchild Semiconductor onsemi onsemi Fairchild Semiconductor Fairchild Semiconductor
Product Status Active Active Active Obsolete Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 60 V 100 V 200 V 80 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 7.5A (Ta) 4.5A (Ta) 12A (Tc) 6A (Ta) 3.9A (Ta) 8.9A (Ta) 3.4A (Ta) 6.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 23mOhm @ 7.5A, 10V 60mOhm @ 4.5A, 10V 10mOhm @ 12A, 10V 35mOhm @ 6A, 10V 70mOhm @ 3.9A, 10V 16mOhm @ 8.9A, 10V 120mOhm @ 3.4A, 10V 32mOhm @ 6.3A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 15 nC @ 10 V 45 nC @ 10 V 25 nC @ 10 V 46 nC @ 10 V 41 nC @ 10 V 20 nC @ 10 V 80 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2015 pF @ 25 V 746 pF @ 25 V 2200 pF @ 25 V 1300 pF @ 25 V 2535 pF @ 100 V 1990 pF @ 25 V 632 pF @ 50 V 2490 pF @ 50 V
FET Feature - - - - - - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

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