FDS3512
  • Share:

onsemi FDS3512

Manufacturer No:
FDS3512
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDS3512 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 4A 8SOIC
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:70mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:18 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:634 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):2.5W (Ta)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-SOIC
Package / Case:8-SOIC (0.154", 3.90mm Width)
0 Remaining View Similar

In Stock

$2.82
9

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDS3512 FDS3612   FDS3572  
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Active Obsolete Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 100 V 80 V
Current - Continuous Drain (Id) @ 25°C 4A (Ta) 3.4A (Ta) 8.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 70mOhm @ 4A, 10V 120mOhm @ 3.4A, 10V 16mOhm @ 8.9A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V 20 nC @ 10 V 41 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 634 pF @ 40 V 632 pF @ 50 V 1990 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 2.5W (Ta) 2.5W (Ta) 2.5W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount
Supplier Device Package 8-SOIC 8-SOIC 8-SOIC
Package / Case 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width) 8-SOIC (0.154", 3.90mm Width)

Related Product By Categories

VN0104N3-G
VN0104N3-G
Microchip Technology
MOSFET N-CH 40V 350MA TO92-3
MTB15N06VT4
MTB15N06VT4
onsemi
N-CHANNEL POWER MOSFET
IPP129N10NF2SAKMA1
IPP129N10NF2SAKMA1
Infineon Technologies
TRENCH >=100V
SUM110P04-05-E3
SUM110P04-05-E3
Vishay Siliconix
MOSFET P-CH 40V 110A TO263
SI3404-TP
SI3404-TP
Micro Commercial Co
MOSFET N-CHANNEL 30V 5.8A SOT23
IPD50R399CPATMA1
IPD50R399CPATMA1
Infineon Technologies
LOW POWER_LEGACY
IXTT50P10
IXTT50P10
IXYS
MOSFET P-CH 100V 50A TO268
IRL3103PBF
IRL3103PBF
Infineon Technologies
MOSFET N-CH 30V 64A TO220AB
2SK1775-E
2SK1775-E
Renesas Electronics America Inc
MOSFET N-CH 900V 8A TO3P
NVMFS5C646NLWFT3G
NVMFS5C646NLWFT3G
onsemi
MOSFET N-CH 60V 20A/93A 5DFN
TSM8N50CP ROG
TSM8N50CP ROG
Taiwan Semiconductor Corporation
MOSFET N-CH 500V 7.2A TO252
SCT2080KEHRC11
SCT2080KEHRC11
Rohm Semiconductor
SICFET N-CH 1200V 40A TO247N

Related Product By Brand

SESDONCAN1LT3G
SESDONCAN1LT3G
onsemi
TVS DIODE 24VWM 50VC SOT23-3
SZMM3Z56VT1G
SZMM3Z56VT1G
onsemi
DIODE ZENER 56V 300MW SOD323
MJE13009G
MJE13009G
onsemi
TRANS NPN 400V 12A TO220
FDN338P
FDN338P
onsemi
MOSFET P-CH 20V 1.6A SUPERSOT3
NDB6060L
NDB6060L
onsemi
MOSFET N-CH 60V 48A D2PAK
LV4923VH-MPB-H
LV4923VH-MPB-H
onsemi
CLASS-D POWER AMPLIFIER
MC10101P
MC10101P
onsemi
OR/NOR GATE
MC14077BFEL
MC14077BFEL
onsemi
XNOR GATE
LC75808W-SH-E
LC75808W-SH-E
onsemi
IC DRVR 480/540/600 SEG 100SQFP
STK531U369A-E
STK531U369A-E
onsemi
MODULE IPM INVERTER 3PH 29SIP
MC34067DWR2
MC34067DWR2
onsemi
IC REG CTRLR FLYBACK 16SOIC
1N6266
1N6266
onsemi
EMITTER IR 940NM 100MA TO-46