FDP55N06
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onsemi FDP55N06

Manufacturer No:
FDP55N06
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FDP55N06 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 55A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:55A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:22mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:1510 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):114W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FDP55N06 FDPF55N06   FDP65N06  
Manufacturer onsemi onsemi onsemi
Product Status Last Time Buy Active Last Time Buy
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 55A (Tc) 55A (Tc) 65A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 22mOhm @ 27.5A, 10V 22mOhm @ 27.5A, 10V 16mOhm @ 32.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 37 nC @ 10 V 43 nC @ 10 V
Vgs (Max) ±25V ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1510 pF @ 25 V 1510 pF @ 25 V 2170 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 114W (Tc) 48W (Tc) 135W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220F-3 TO-220-3
Package / Case TO-220-3 TO-220-3 Full Pack TO-220-3

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