onsemi-FDP4020P - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	80mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id:	1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	13 nC @ 4.5 V
Vgs (Max):	±8V
Input Capacitance (Ciss) (Max) @ Vds:	665 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	37.5W (Tc)
Operating Temperature:	-65°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220-3
Package / Case:	TO-220-3

onsemi FDP4020P