FDP3672
  • Share:

onsemi FDP3672

Manufacturer No:
FDP3672
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FDP3672 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 105V 5.9A/41A TO220
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):105 V
Current - Continuous Drain (Id) @ 25°C:5.9A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:33mOhm @ 41A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:37 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1670 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):135W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.20
117

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDP3672 FDP3682   FDP3632   FDP3652  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Active Active Not For New Designs Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 105 V 100 V 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 5.9A (Ta), 41A (Tc) 6A (Ta), 32A (Tc) 12A (Ta), 80A (Tc) 9A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 33mOhm @ 41A, 10V 36mOhm @ 32A, 10V 9mOhm @ 80A, 10V 16mOhm @ 61A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 37 nC @ 10 V 28 nC @ 10 V 110 nC @ 10 V 53 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 25 V 1250 pF @ 25 V 6000 pF @ 25 V 2880 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 135W (Tc) 95W (Tc) 310W (Tc) 150W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

MMFTN170
MMFTN170
Diotec Semiconductor
MOSFET N-CH 60V 500MA SOT23-3
CSD19534KCS
CSD19534KCS
Texas Instruments
MOSFET N-CH 100V 100A TO220-3
FDS86252
FDS86252
onsemi
MOSFET N-CH 150V 4.5A 8SOIC
IRFB3307PBF
IRFB3307PBF
Infineon Technologies
MOSFET N-CH 75V 130A TO220AB
PMPB29XPEAX
PMPB29XPEAX
Nexperia USA Inc.
MOSFET P-CH 20V 5A DFN2020MD-6
IPI50R399CPXKSA2
IPI50R399CPXKSA2
Infineon Technologies
MOSFET N-CH 500V 9A TO262-3
SIHP186N60EF-GE3
SIHP186N60EF-GE3
Vishay Siliconix
MOSFET N-CH 600V 18A TO220AB
IXFK120N25P
IXFK120N25P
IXYS
MOSFET N-CH 250V 120A TO264AA
APT31N80JC3
APT31N80JC3
Microsemi Corporation
MOSFET N-CH 800V 31A ISOTOP
SI7802DN-T1-GE3
SI7802DN-T1-GE3
Vishay Siliconix
MOSFET N-CH 250V 1.24A PPAK
AOD4158
AOD4158
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 17A TO252
PHB55N03LTA,118
PHB55N03LTA,118
NXP USA Inc.
MOSFET N-CH 25V 55A D2PAK

Related Product By Brand

NVMFS6D1N08HT1G
NVMFS6D1N08HT1G
onsemi
T8 80V
NLAS9031DFT2G
NLAS9031DFT2G
onsemi
SPDT, 1 FUNC, 1 CHANNEL, CMOS, P
NL17VHC1GT50DFT1
NL17VHC1GT50DFT1
onsemi
IC BUFFER NON-INVERT 5.5V SC88A
MC74ACT08M
MC74ACT08M
onsemi
AND GATE, ACT SERIES
NLVHCT08ADTR2G
NLVHCT08ADTR2G
onsemi
IC GATE AND 4CH 2-INP 14TSSOP
NB100LVEP17DTR2G
NB100LVEP17DTR2G
onsemi
IC DRV/RCV ECL QUAD DIFF 20TSSOP
NCP1582ADR2G
NCP1582ADR2G
onsemi
IC REG CTRLR BUCK 8SOIC
NCV97310MW50R2G
NCV97310MW50R2G
onsemi
IC REG QUAD BUCK/LNR SYNC 32QFN
NCV562SQ25T1G
NCV562SQ25T1G
onsemi
IC REG LINEAR 2.5V 80MA SC82AB
LM317D2TR4
LM317D2TR4
onsemi
IC REG VOLT ADJ 1.5A D2PAK-3
MC7806BT
MC7806BT
onsemi
IC REG LINEAR 6V 1A TO220AB
AR0130CSSC00SPBA0-DR1
AR0130CSSC00SPBA0-DR1
onsemi
IMAGE SENSOR 1.2MP 1/3 CIS