FDP3652
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onsemi FDP3652

Manufacturer No:
FDP3652
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FDP3652 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 9A/61A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:9A (Ta), 61A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:16mOhm @ 61A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2880 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):150W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FDP3652 FDP3682   FDP3672   FDP3632  
Manufacturer onsemi onsemi onsemi onsemi
Product Status Not For New Designs Active Active Not For New Designs
FET Type N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V 105 V 100 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta), 61A (Tc) 6A (Ta), 32A (Tc) 5.9A (Ta), 41A (Tc) 12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 16mOhm @ 61A, 10V 36mOhm @ 32A, 10V 33mOhm @ 41A, 10V 9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 53 nC @ 10 V 28 nC @ 10 V 37 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2880 pF @ 25 V 1250 pF @ 25 V 1670 pF @ 25 V 6000 pF @ 25 V
FET Feature - - - -
Power Dissipation (Max) 150W (Tc) 95W (Tc) 135W (Tc) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3

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