FDP15N40
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onsemi FDP15N40

Manufacturer No:
FDP15N40
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FDP15N40 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 400V 15A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):400 V
Current - Continuous Drain (Id) @ 25°C:15A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:300mOhm @ 7.5A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:36 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1750 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):170W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FDP15N40 FDP15N50   FDP19N40  
Manufacturer onsemi Fairchild Semiconductor onsemi
Product Status Obsolete Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 500 V 400 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 15A (Tc) 19A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 300mOhm @ 7.5A, 10V 380mOhm @ 7.5A, 10V 240mOhm @ 9.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 4V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 36 nC @ 10 V 41 nC @ 10 V 40 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1750 pF @ 25 V 1850 pF @ 25 V 2115 pF @ 25 V
FET Feature - - -
Power Dissipation (Max) 170W (Tc) 300W (Tc) 215W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3

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