FDP085N10A-F102
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onsemi FDP085N10A-F102

Manufacturer No:
FDP085N10A-F102
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FDP085N10A-F102 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 96A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:96A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:8.5mOhm @ 96A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:40 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2695 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):188W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FDP085N10A-F102 FDP045N10A-F102  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 96A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 8.5mOhm @ 96A, 10V 4.5mOhm @ 100A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 74 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2695 pF @ 50 V 5270 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 188W (Tc) 263W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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