FDP027N08B-F102
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onsemi FDP027N08B-F102

Manufacturer No:
FDP027N08B-F102
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FDP027N08B-F102 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 120A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.7mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:178 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:13530 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):246W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FDP027N08B-F102 FDP023N08B-F102  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 75 V
Current - Continuous Drain (Id) @ 25°C 120A (Tc) 120A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 2.7mOhm @ 100A, 10V 2.35mOhm @ 75A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 3.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 178 nC @ 10 V 195 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13530 pF @ 40 V 13765 pF @ 37.5 V
FET Feature - -
Power Dissipation (Max) 246W (Tc) 245W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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