FDN339AN
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onsemi FDN339AN

Manufacturer No:
FDN339AN
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDN339AN Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 20V 3A SUPERSOT3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:35mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:10 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:700 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):500mW (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SOT-23-3
Package / Case:TO-236-3, SC-59, SOT-23-3
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Similar Products

Part Number FDN339AN FDN359AN  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 30 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta) 2.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 4.5V, 10V
Rds On (Max) @ Id, Vgs 35mOhm @ 3A, 4.5V 46mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id 1.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 10 nC @ 4.5 V 7 nC @ 5 V
Vgs (Max) ±8V ±20V
Input Capacitance (Ciss) (Max) @ Vds 700 pF @ 10 V 480 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 500mW (Ta) 500mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-3 SOT-23-3
Package / Case TO-236-3, SC-59, SOT-23-3 TO-236-3, SC-59, SOT-23-3

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