onsemi-FDMS3660S-F121 - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual) Asymmetrical
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	13A, 30A
Rds On (Max) @ Id, Vgs:	8mOhm @ 13A, 10V
Vgs(th) (Max) @ Id:	2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	29nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	1765pF @ 15V
Power - Max:	1W
Operating Temperature:	-
Mounting Type:	Surface Mount
Package / Case:	8-PowerTDFN
Supplier Device Package:	Power56

onsemi FDMS3660S-F121