onsemi-FDMS1D4N03S - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	211A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.09mOhm @ 38A, 10V
Vgs(th) (Max) @ Id:	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	65 nC @ 4.5 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	10250 pF @ 15 V
FET Feature:	Schottky Diode (Body)
Power Dissipation (Max):	74W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-PQFN (5x6)
Package / Case:	8-PowerTDFN

onsemi FDMS1D4N03S