FDME510PZT
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onsemi FDME510PZT

Manufacturer No:
FDME510PZT
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDME510PZT Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 20V 6A MICROFET
Delivery:
Payment:
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.5V, 4.5V
Rds On (Max) @ Id, Vgs:37mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1490 pF @ 10 V
FET Feature:- 
Power Dissipation (Max):2.1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MicroFet 1.6x1.6 Thin
Package / Case:6-PowerUFDFN
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$0.92
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Similar Products

Part Number FDME510PZT FDME910PZT  
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Ta) 8A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.5V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 37mOhm @ 6A, 4.5V 24mOhm @ 8A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 4.5 V 21 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 1490 pF @ 10 V 2110 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 2.1W (Ta) 2.1W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package MicroFet 1.6x1.6 Thin MicroFet 1.6x1.6 Thin
Package / Case 6-PowerUFDFN 6-PowerUFDFN

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