FDMC610P
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onsemi FDMC610P

Manufacturer No:
FDMC610P
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDMC610P Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 12V 80A POWER33
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):12 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:3.9mOhm @ 22A, 4.5V
Vgs(th) (Max) @ Id:1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:99 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:1250 pF @ 6 V
FET Feature:- 
Power Dissipation (Max):2.4W (Ta), 48W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:Power33
Package / Case:8-PowerTDFN
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$2.33
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Similar Products

Part Number FDMC610P FDMC510P  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 12 V 20 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 12A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V 1.5V, 4.5V
Rds On (Max) @ Id, Vgs 3.9mOhm @ 22A, 4.5V 8mOhm @ 12A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 99 nC @ 4.5 V 116 nC @ 4.5 V
Vgs (Max) ±8V ±8V
Input Capacitance (Ciss) (Max) @ Vds 1250 pF @ 6 V 7860 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 2.4W (Ta), 48W (Tc) 2.3W (Ta), 41W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package Power33 8-MLP (3.3x3.3)
Package / Case 8-PowerTDFN 8-PowerWDFN

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