onsemi-FDMC4D9P20X8 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	18A (Ta), 75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	4.9mOhm @ 18A, 4.5V
Vgs(th) (Max) @ Id:	1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	109 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	10550 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	2.4W (Ta), 40W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-PQFN (3.3x3.3)
Package / Case:	8-PowerWDFN

onsemi FDMC4D9P20X8