FDMC4435BZ
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onsemi FDMC4435BZ

Manufacturer No:
FDMC4435BZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDMC4435BZ Datasheet
ECAD Model:
-
Description:
MOSFET P-CH 30V 8.5A/18A 8MLP
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:8.5A (Ta), 18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:20mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±25V
Input Capacitance (Ciss) (Max) @ Vds:2045 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):2.3W (Ta), 31W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:8-MLP (3.3x3.3)
Package / Case:8-PowerWDFN
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Similar Products

Part Number FDMC4435BZ FDMC4436BZ  
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Obsolete
FET Type P-Channel -
Technology MOSFET (Metal Oxide) -
Drain to Source Voltage (Vdss) 30 V -
Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 18A (Tc) -
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V -
Rds On (Max) @ Id, Vgs 20mOhm @ 8.5A, 10V -
Vgs(th) (Max) @ Id 3V @ 250µA -
Gate Charge (Qg) (Max) @ Vgs 46 nC @ 10 V -
Vgs (Max) ±25V -
Input Capacitance (Ciss) (Max) @ Vds 2045 pF @ 15 V -
FET Feature - -
Power Dissipation (Max) 2.3W (Ta), 31W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Surface Mount -
Supplier Device Package 8-MLP (3.3x3.3) -
Package / Case 8-PowerWDFN -

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