onsemi-FDMC008N08C - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	7.8mOhm @ 21A, 10V
Vgs(th) (Max) @ Id:	4V @ 120µA
Gate Charge (Qg) (Max) @ Vgs:	29 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	2150 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	57W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-PQFN (3.3x3.3), Power33
Package / Case:	8-PowerWDFN

onsemi FDMC008N08C