onsemi-FDMB3900AN - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	25V
Current - Continuous Drain (Id) @ 25°C:	7A
Rds On (Max) @ Id, Vgs:	23mOhm @ 7A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	890pF @ 13V
Power - Max:	800mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-MLP, MicroFET (3x1.9)

onsemi FDMB3900AN