onsemi-FDMB3800N - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	2 N-Channel (Dual)
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	30V
Current - Continuous Drain (Id) @ 25°C:	4.8A
Rds On (Max) @ Id, Vgs:	40mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	5.6nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds:	465pF @ 15V
Power - Max:	750mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-PowerWDFN
Supplier Device Package:	8-MLP, MicroFET (3x1.9)

onsemi FDMB3800N