onsemi-FDMA1032CZ - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	20V
Current - Continuous Drain (Id) @ 25°C:	3.7A, 3.1A
Rds On (Max) @ Id, Vgs:	68mOhm @ 3.7A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:	340pF @ 10V
Power - Max:	700mW
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	6-VDFN Exposed Pad
Supplier Device Package:	6-MicroFET (2x2)

onsemi FDMA1032CZ