FDH3632
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onsemi FDH3632

Manufacturer No:
FDH3632
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FDH3632 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 12A/80A TO247-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:110 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):310W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-247-3
Package / Case:TO-247-3
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Similar Products

Part Number FDH3632 FDI3632  
Manufacturer onsemi onsemi
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 80A (Tc) 12A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 6V, 10V
Rds On (Max) @ Id, Vgs 9mOhm @ 80A, 10V 9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V 110 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 6000 pF @ 25 V 6000 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 310W (Tc) 310W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-247-3 I2PAK (TO-262)
Package / Case TO-247-3 TO-262-3 Long Leads, I²Pak, TO-262AA

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