onsemi-FDFME3N311ZT - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	1.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	299mOhm @ 1.6A, 4.5V
Vgs(th) (Max) @ Id:	1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	1.4 nC @ 4.5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	75 pF @ 15 V
FET Feature:	-
Power Dissipation (Max):	600mW (Ta)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	6-UMLP (1.6x1.6)
Package / Case:	6-UFDFN Exposed Pad

onsemi FDFME3N311ZT