FDD86367
  • Share:

onsemi FDD86367

Manufacturer No:
FDD86367
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDD86367 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 80V 100A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):80 V
Current - Continuous Drain (Id) @ 25°C:100A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:4.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:88 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4840 pF @ 40 V
FET Feature:- 
Power Dissipation (Max):227W (Tj)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D-PAK (TO-252)
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

$2.31
34

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDD86367 FDD86369  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 80 V 80 V
Current - Continuous Drain (Id) @ 25°C 100A (Tc) 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 4.2mOhm @ 80A, 10V 7.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 88 nC @ 10 V 54 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4840 pF @ 40 V 2530 pF @ 40 V
FET Feature - -
Power Dissipation (Max) 227W (Tj) 150W (Tj)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D-PAK (TO-252) D-PAK (TO-252)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

TSM5NC50CP ROG
TSM5NC50CP ROG
Taiwan Semiconductor Corporation
MOSFET N-CHANNEL 500V 5A TO252
IRL7472L1TRPBF
IRL7472L1TRPBF
Infineon Technologies
MOSFET N-CH 40V 375A DIRECTFET
FDP100N10
FDP100N10
onsemi
MOSFET N-CH 100V 75A TO220-3
STD12N60DM2AG
STD12N60DM2AG
STMicroelectronics
AUTOMOTIVE-GRADE N-CHANNEL 600 V
DMN3069L-13
DMN3069L-13
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
IXFN44N100P
IXFN44N100P
IXYS
MOSFET N-CH 1000V 37A SOT-227B
APT8014L2FLLG
APT8014L2FLLG
Microchip Technology
MOSFET N-CH 800V 52A 264 MAX
IRFR9N20DTRLPBF
IRFR9N20DTRLPBF
Infineon Technologies
MOSFET N-CH 200V 9.4A DPAK
IXTH90N15T
IXTH90N15T
IXYS
MOSFET N-CH 150V 90A TO247
NP88N075KUE-E1-AY
NP88N075KUE-E1-AY
Renesas Electronics America Inc
MOSFET N-CH 75V 88A TO263
APT33N90JCU3
APT33N90JCU3
Microchip Technology
MOSFET N-CH 900V 33A SOT227
R6020JNJGTL
R6020JNJGTL
Rohm Semiconductor
MOSFET N-CH 600V 20A LPTS

Related Product By Brand

1SMA7.5AT3
1SMA7.5AT3
onsemi
TRANS VOLTAGE SUPPRESSOR DIODE
NP0120TAT1G
NP0120TAT1G
onsemi
THYRISTOR 12V 50A SOT23-5
BAV23CLT3G
BAV23CLT3G
onsemi
DIODE ARRAY GP 250V 400MA SOT23
MCR218-2G
MCR218-2G
onsemi
SILICON CONTROLLED RECTIFIER, 8A
BC556TF
BC556TF
onsemi
TRANS PNP 65V 0.1A TO92-3
BC184C
BC184C
onsemi
TRANS NPN 30V 0.5A TO92-3
TIP142TTU
TIP142TTU
onsemi
TRANS NPN DARL 100V 10A TO220-3
NB7L11MMN
NB7L11MMN
onsemi
IC CLK BUFFER 1:2 8GHZ 16QFN
MC74LVXT8053MEL
MC74LVXT8053MEL
onsemi
IC MUX/DEMUX TRIPLE 2X1 16SOEIAJ
NCV7608DWR2G
NCV7608DWR2G
onsemi
IC DVR LO/HI SIDE 8CH 28-SOIC
UC2843BD1R2G
UC2843BD1R2G
onsemi
IC REG CTRLR FLYBACK 8SOIC
NCP186AMX295TAG
NCP186AMX295TAG
onsemi
IC REG LINEAR 2.95V 1A 8XDFN