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| Part Number | FDD850N10L | FDD850N10LD |
|---|---|---|
| Manufacturer | onsemi | Fairchild Semiconductor |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 15.7A (Tc) | 15.3A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V | - |
| Rds On (Max) @ Id, Vgs | 75mOhm @ 12A, 10V | 75mOhm @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA | 2.5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 28.9 nC @ 10 V | 28.9 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1465 pF @ 25 V | 1465 pF @ 25 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 50W (Tc) | 42W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | TO-252AA | TO-252-4 |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
