FDD6670A
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onsemi FDD6670A

Manufacturer No:
FDD6670A
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDD6670A Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 15A/66A DPAK
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:15A (Ta), 66A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:8mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1755 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):3.2W (Ta), 63W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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Similar Products

Part Number FDD6670A FDD6770A   FDD6670S   FDD6672A   FDD6670AL   FDD6680A   FDD6690A   FDD6670AS   FDD6630A  
Manufacturer onsemi Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor Fairchild Semiconductor onsemi Fairchild Semiconductor onsemi
Product Status Active Active Active Obsolete Obsolete Obsolete Active Obsolete Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 25 V 30 V 30 V 30 V 30 V 30 V 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 15A (Ta), 66A (Tc) 24A (Ta), 50A (Tc) 64A (Ta) 65A (Ta) 84A (Ta) 14A (Ta), 56A (Tc) 12A (Ta), 46A (Tc) 76A (Ta) 21A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 8mOhm @ 15A, 10V 4mOhm @ 24A, 10V 9mOhm @ 13.8A, 10V 8mOhm @ 14A, 10V 5mOhm @ 18A, 10V 9.5mOhm @ 14A, 10V 12mOhm @ 12A, 10V 8mOhm @ 13.8A, 10V 35mOhm @ 7.6A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 3V @ 250µA 3V @ 1mA 2V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 1mA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 5 V 47 nC @ 10 V 24 nC @ 10 V 46 nC @ 4.5 V 56 nC @ 5 V 20 nC @ 5 V 18 nC @ 5 V 40 nC @ 10 V 7 nC @ 5 V
Vgs (Max) ±20V ±20V ±20V ±12V ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1755 pF @ 15 V 2405 pF @ 13 V 2010 pF @ 15 V 5070 pF @ 15 V 3845 pF @ 15 V 1425 pF @ 15 V 1230 pF @ 15 V 1580 pF @ 15 V 462 pF @ 15 V
FET Feature - - - - - - - - -
Power Dissipation (Max) 3.2W (Ta), 63W (Tc) 3.7W (Ta), 65W (Tc) 1.3W (Ta) 3.2W (Ta), 70W (Tc) 83W (Ta) 2.8W (Ta), 60W (Tc) 3.3W (Ta), 56W (Tc) 70W (Ta) 28W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount
Supplier Device Package TO-252AA D-PAK (TO-252) TO-252, (D-Pak) TO-252, (D-Pak) TO-252, (D-Pak) TO-252, (D-Pak) TO-252AA TO-252, (D-Pak) TO-252AA
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

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