FDD5612
  • Share:

onsemi FDD5612

Manufacturer No:
FDD5612
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDD5612 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 60V 5.4A TO252-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:5.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:55mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:660 pF @ 30 V
FET Feature:- 
Power Dissipation (Max):3.8W (Ta), 42W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
0 Remaining View Similar

In Stock

-
30

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDD5612 FDD2612  
Manufacturer onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 200 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta) 4.9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V 10V
Rds On (Max) @ Id, Vgs 55mOhm @ 5.4A, 10V 720mOhm @ 1.5A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V 11 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 660 pF @ 30 V 234 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 3.8W (Ta), 42W (Tc) 42W (Ta)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252, (D-Pak)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-3, DPak (2 Leads + Tab), SC-63

Related Product By Categories

IRFS3206TRRPBF
IRFS3206TRRPBF
Infineon Technologies
MOSFET N-CH 60V 120A D2PAK
SSM3K318R,LF
SSM3K318R,LF
Toshiba Semiconductor and Storage
MOSFET N-CH 60V 2.5A SOT23F
BUK751R8-40E127
BUK751R8-40E127
NXP USA Inc.
N-CHANNEL POWER MOSFET
IPB90N06S4L04ATMA2
IPB90N06S4L04ATMA2
Infineon Technologies
MOSFET N-CH 60V 90A TO263-3
FQB47P06TM-AM002
FQB47P06TM-AM002
onsemi
MOSFET P-CH 60V 47A D2PAK
IPD068N10N3GATMA1
IPD068N10N3GATMA1
Infineon Technologies
MOSFET N-CH 100V 90A TO252-3
SQJ840EP-T1_GE3
SQJ840EP-T1_GE3
Vishay Siliconix
MOSFET N-CH 30V 30A PPAK SO-8
IRF3315STRRPBF
IRF3315STRRPBF
Infineon Technologies
MOSFET N-CH 150V 21A D2PAK
RJK4018DPK-00#T0
RJK4018DPK-00#T0
Renesas Electronics America Inc
MOSFET N-CH 400V 43A TO3P
2SK3670,F(J
2SK3670,F(J
Toshiba Semiconductor and Storage
MOSFET N-CH TO92MOD
RJK1555DPA-WS#J0
RJK1555DPA-WS#J0
Renesas Electronics America Inc
MOSFET N-CH 150V 25A 8WPAK
PHP71NQ03LT,127
PHP71NQ03LT,127
NXP USA Inc.
MOSFET N-CH 30V 75A TO220AB

Related Product By Brand

NCP337FCT2GEVB
NCP337FCT2GEVB
onsemi
EVAL BOARD NCP337FCT2G
FC903-TR-E
FC903-TR-E
onsemi
DIODE ARRAY GP 80V 100MA 6TCP
SZBZX84B8V2LT1G
SZBZX84B8V2LT1G
onsemi
DIODE ZENER 8.2V 225MW SOT23-3
1SMB5954BT3
1SMB5954BT3
onsemi
DIODE ZENER 160V 3W SMB
BC309BBU
BC309BBU
onsemi
TRANS PNP 25V 0.1A TO92-3
NTD60N02RT4G
NTD60N02RT4G
onsemi
MOSFET N-CH 25V 8.5A/32A DPAK
MGP4N60ED
MGP4N60ED
onsemi
IGBT, 6A, 600V, N-CHANNEL
MC100E211FNR2
MC100E211FNR2
onsemi
IC CLK BUFFER 2:6 700MHZ 28PLCC
MC33204VDG
MC33204VDG
onsemi
IC OPAMP GP 4 CIRCUIT 14SOIC
NCP81109DMNTXG
NCP81109DMNTXG
onsemi
IC REG BUCK CTLR 48QFN
MC33375ST-2.5T3
MC33375ST-2.5T3
onsemi
IC REG LINEAR 2.5V 300MA SOT223
MOC3083FR2M
MOC3083FR2M
onsemi
OPTOISOLATOR 7.5KV TRIAC 6SMD