onsemi-FDD4685TF_SB82135 - Transistors - FETs, MOSFETs - Single Product Specifications and Latest Quotes

FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	8.4A (Ta), 32A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	27mOhm @ 8.4A, 10V
Vgs(th) (Max) @ Id:	3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	27 nC @ 5 V
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	2380 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-252AA
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

onsemi FDD4685TF_SB82135