onsemi-FDD3510H - Transistors - FETs, MOSFETs - Arrays Product Specifications and Latest Quotes

FET Type:	N and P-Channel, Common Drain
FET Feature:	Logic Level Gate
Drain to Source Voltage (Vdss):	80V
Current - Continuous Drain (Id) @ 25°C:	4.3A, 2.8A
Rds On (Max) @ Id, Vgs:	80mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:	800pF @ 40V
Power - Max:	1.3W
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Supplier Device Package:	TO-252 (DPAK)

onsemi FDD3510H