FDD1600N10ALZ
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onsemi FDD1600N10ALZ

Manufacturer No:
FDD1600N10ALZ
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDD1600N10ALZ Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 6.8A TO252
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):5V, 10V
Rds On (Max) @ Id, Vgs:160mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id:2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:3.61 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):14.9W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:TO-252AA
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63
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In Stock

$1.06
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Similar Products

Part Number FDD1600N10ALZ FDD1600N10ALZD  
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc) 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 160mOhm @ 3.4A, 10V 160mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.61 nC @ 10 V 3.61 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 225 pF @ 50 V 225 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 14.9W (Tc) 14.9W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-252AA TO-252-4
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252-5, DPak (4 Leads + Tab), TO-252AD

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