FDC653N
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onsemi FDC653N

Manufacturer No:
FDC653N
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDC653N Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 5A SUPERSOT6
Delivery:
Payment:
iso14001
iso45001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:5A (Ta)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:35mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:17 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:350 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):1.6W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:SuperSOT™-6
Package / Case:SOT-23-6 Thin, TSOT-23-6
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Similar Products

Part Number FDC653N FDC633N  
Manufacturer onsemi Fairchild Semiconductor
Product Status Active Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 5A (Ta) 5.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 35mOhm @ 5A, 10V 42mOhm @ 5.2A, 4.5V
Vgs(th) (Max) @ Id 2V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 16 nC @ 4.5 V
Vgs (Max) ±20V ±8V
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 15 V 538 pF @ 10 V
FET Feature - -
Power Dissipation (Max) 1.6W (Ta) 1.6W (Ta)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package SuperSOT™-6 SuperSOT™-6
Package / Case SOT-23-6 Thin, TSOT-23-6 SOT-23-6 Thin, TSOT-23-6

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