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| Part Number | FDC2612 | FDD2612 | FDC5612 | FDC3612 | FDC2512 |
|---|---|---|---|---|---|
| Manufacturer | onsemi | Fairchild Semiconductor | onsemi | onsemi | onsemi |
| Product Status | Active | Obsolete | Active | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | 200 V | 60 V | 100 V | 150 V |
| Current - Continuous Drain (Id) @ 25°C | 1.1A (Ta) | 4.9A (Ta) | 4.3A (Ta) | 2.6A (Ta) | 1.4A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 6V, 10V | 6V, 10V | 6V, 10V |
| Rds On (Max) @ Id, Vgs | 725mOhm @ 1.1A, 10V | 720mOhm @ 1.5A, 10V | 55mOhm @ 4.3A, 10V | 125mOhm @ 2.6A, 10V | 425mOhm @ 1.4A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250µA | 4.5V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 11 nC @ 10 V | 11 nC @ 10 V | 18 nC @ 10 V | 20 nC @ 10 V | 11 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 234 pF @ 100 V | 234 pF @ 100 V | 650 pF @ 25 V | 660 pF @ 50 V | 344 pF @ 75 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 1.6W (Ta) | 42W (Ta) | 1.6W (Ta) | 1.6W (Ta) | 1.6W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | SuperSOT™-6 | TO-252, (D-Pak) | SuperSOT™-6 | SuperSOT™-6 | SuperSOT™-6 |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 | TO-252-3, DPak (2 Leads + Tab), SC-63 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 | SOT-23-6 Thin, TSOT-23-6 |
