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| Part Number | FDB86366-F085 | FDB86566-F085 | FDBL86366-F085 | FDB86360-F085 | FDB86363-F085 |
|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | onsemi | onsemi | onsemi |
| Product Status | Active | Active | Active | Active | Active |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 80 V | 60 V | 80 V | 80 V | 80 V |
| Current - Continuous Drain (Id) @ 25°C | 110A (Tc) | 110A (Tc) | 220A (Tc) | 110A (Tc) | 110A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 3.6mOhm @ 80A, 10V | 2.7mOhm @ 80A, 10V | 3mOhm @ 80A, 10V | 1.8mOhm @ 80A, 10V | 2.4mOhm @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA | 4V @ 250µA | 4V @ 250µA | 4.5V @ 250µA | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 112 nC @ 10 V | 110 nC @ 10 V | 112 nC @ 10 V | 253 nC @ 10 V | 150 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 6280 pF @ 40 V | 6655 pF @ 30 V | 6320 pF @ 40 V | 14600 pF @ 25 V | 10000 pF @ 40 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 176W (Tj) | 176W (Tj) | 300W (Tj) | 333W (Tc) | 300W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | D²PAK (TO-263) | D²PAK (TO-263) | 8-HPSOF | D²PAK (TO-263) | D²PAK (TO-263) |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | 8-PowerSFN | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
