FDB8132
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onsemi FDB8132

Manufacturer No:
FDB8132
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDB8132 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 30V 80A D2PAK
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1.6mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:350 nC @ 13 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:14100 pF @ 15 V
FET Feature:- 
Power Dissipation (Max):341W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FDB8132 FDB8832  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V 30 V
Current - Continuous Drain (Id) @ 25°C 80A (Tc) 34A (Ta), 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 1.6mOhm @ 80A, 10V 1.9mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 350 nC @ 13 V 265 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 14100 pF @ 15 V 11400 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 341W (Tc) 300W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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