FDB3860
  • Share:

onsemi FDB3860

Manufacturer No:
FDB3860
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDB3860 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 6.4A/30A TO263
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:6.4A (Ta), 30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:37mOhm @ 5.9A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:30 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1740 pF @ 50 V
FET Feature:- 
Power Dissipation (Max):3.1W (Ta), 71W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
0 Remaining View Similar

In Stock

-
52

Please send RFQ , we will respond immediately.

Similar Products

Part Number FDB3860 FDB8860  
Manufacturer onsemi onsemi
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 30 V
Current - Continuous Drain (Id) @ 25°C 6.4A (Ta), 30A (Tc) 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 37mOhm @ 5.9A, 10V 2.3mOhm @ 80A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V 214 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1740 pF @ 50 V 12585 pF @ 15 V
FET Feature - -
Power Dissipation (Max) 3.1W (Ta), 71W (Tc) 254W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Related Product By Categories

2SK209-Y(TE85L,F)
2SK209-Y(TE85L,F)
Toshiba Semiconductor and Storage
MOSFET N-CH 10V 14MA SC59
SSS4N60BT
SSS4N60BT
Fairchild Semiconductor
TRANS MOSFET N-CH 600V 4A 3PIN(3
BUZ32H3045A
BUZ32H3045A
Infineon Technologies
N-CHANNEL POWER MOSFET
STF120NF10
STF120NF10
STMicroelectronics
MOSFET N-CH 100V 41A TO220FP
BUK7Y3R5-40HX
BUK7Y3R5-40HX
Nexperia USA Inc.
MOSFET N-CH 40V 120A LFPAK56
BSC065N06LS5ATMA1
BSC065N06LS5ATMA1
Infineon Technologies
MOSFET N-CHANNEL 60V 64A 8TDSON
PMPB20XPE,115
PMPB20XPE,115
Nexperia USA Inc.
MOSFET P-CH 20V 7.2A DFN2020MD-6
TPHR9003NL,L1Q
TPHR9003NL,L1Q
Toshiba Semiconductor and Storage
MOSFET N-CH 30V 60A 8SOP
BSC0503NSIATMA1
BSC0503NSIATMA1
Infineon Technologies
MOSFET N-CH 30V 22A/88A TDSON
NVTFS4C06NTAG
NVTFS4C06NTAG
onsemi
MOSFET N-CH 30V 21A 8WDFN
SIE836DF-T1-E3
SIE836DF-T1-E3
Vishay Siliconix
MOSFET N-CH 200V 18.3A 10POLARPK
R6012ANX
R6012ANX
Rohm Semiconductor
MOSFET N-CH 600V 12A TO220FM

Related Product By Brand

SZMMQA15VT1G
SZMMQA15VT1G
onsemi
TVS DIODE 11VWM 21.7VC SC74
NSR2030QMUTAG
NSR2030QMUTAG
onsemi
BRIDGE RECT 1PHASE 30V 2A 4UDFN
SZMMBZ5240ELT1G
SZMMBZ5240ELT1G
onsemi
DIODE ZENER 10V 225MW SOT23-3
1N6012B_T50A
1N6012B_T50A
onsemi
DIODE ZENER 33V 500MW DO35
KSC2752OS
KSC2752OS
onsemi
TRANS NPN 400V 0.5A TO126-3
MJD44H11
MJD44H11
onsemi
TRANS POWER NPN 8A 80V DPAK
BFL4037-1E
BFL4037-1E
onsemi
MOSFET N-CH 500V 11A TO220F-3FS
FGH50N6S2D
FGH50N6S2D
onsemi
IGBT 600V 75A TO247-3
NGTB50N60FLWG
NGTB50N60FLWG
onsemi
IGBT 600V 50A TO247
TL331SN4T3G
TL331SN4T3G
onsemi
IC COMPARATOR 1CH LP 5TSOP
MC100EL90DWR2
MC100EL90DWR2
onsemi
IC TRNSLTR UNIDIRECTIONAL 20SOIC
NCV8160BMX330TBG
NCV8160BMX330TBG
onsemi
NCV8160 - LDO REGULATOR, 250 MA,