FDB150N10
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onsemi FDB150N10

Manufacturer No:
FDB150N10
Manufacturer:
onsemi
Package:
Tape & Reel (TR)
Datasheet:
FDB150N10 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 100V 57A D2PAK
Delivery:
Payment:
iso14001
iso45001
iso9001
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:57A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:15mOhm @ 49A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:69 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:4760 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):110W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:D²PAK (TO-263)
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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Similar Products

Part Number FDB150N10 FDB120N10  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 57A (Tc) 74A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 15mOhm @ 49A, 10V 12mOhm @ 74A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 69 nC @ 10 V 86 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 4760 pF @ 25 V 5605 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 110W (Tc) 170W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Surface Mount
Supplier Device Package D²PAK (TO-263) D²PAK (TO-263)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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