FDA50N50
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onsemi FDA50N50

Manufacturer No:
FDA50N50
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
FDA50N50 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 500V 48A TO3PN
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):500 V
Current - Continuous Drain (Id) @ 25°C:48A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:105mOhm @ 24A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:137 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6460 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):625W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3PN
Package / Case:TO-3P-3, SC-65-3
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Similar Products

Part Number FDA50N50 FDA20N50  
Manufacturer onsemi Fairchild Semiconductor
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V 500 V
Current - Continuous Drain (Id) @ 25°C 48A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V -
Rds On (Max) @ Id, Vgs 105mOhm @ 24A, 10V 230mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 137 nC @ 10 V 59.5 nC @ 10 V
Vgs (Max) ±20V -
Input Capacitance (Ciss) (Max) @ Vds 6460 pF @ 25 V 3120 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 625W (Tc) -
Operating Temperature -55°C ~ 150°C (TJ) -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-3PN TO-3PN
Package / Case TO-3P-3, SC-65-3 TO-3P-3, SC-65-3

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