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| Part Number | FDA20N50F | FDA28N50F | FDB20N50F | FDA24N50F | FDA20N50 |
|---|---|---|---|---|---|
| Manufacturer | onsemi | onsemi | onsemi | onsemi | Fairchild Semiconductor |
| Product Status | Last Time Buy | Active | Active | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 500 V | 500 V | 500 V | 500 V | 500 V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) | 28A (Tc) | 20A (Tc) | 24A (Tc) | 22A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V | 10V | 10V | - |
| Rds On (Max) @ Id, Vgs | 260mOhm @ 11A, 10V | 175mOhm @ 14A, 10V | 260mOhm @ 10A, 10V | 200mOhm @ 12A, 10V | 230mOhm @ 11A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 65 nC @ 10 V | 105 nC @ 10 V | 65 nC @ 10 V | 85 nC @ 10 V | 59.5 nC @ 10 V |
| Vgs (Max) | ±30V | ±30V | ±30V | ±30V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 3390 pF @ 25 V | 5387 pF @ 25 V | 3390 pF @ 25 V | 4310 pF @ 25 V | 3120 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 388W (Tc) | 310W (Tc) | 250W (Tc) | 270W (Tc) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) | - |
| Mounting Type | Through Hole | Through Hole | Surface Mount | Through Hole | Through Hole |
| Supplier Device Package | TO-3PN | TO-3PN | D²PAK (TO-263) | TO-3PN | TO-3PN |
| Package / Case | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-3P-3, SC-65-3 | TO-3P-3, SC-65-3 |
