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| Part Number | FCU850N80Z | FCP850N80Z |
|---|---|---|
| Manufacturer | onsemi | onsemi |
| Product Status | Last Time Buy | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 800 V | 800 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | 8A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 3A, 10V | 850mOhm @ 3A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 600µA | 4.5V @ 600µA |
| Gate Charge (Qg) (Max) @ Vgs | 29 nC @ 10 V | 29 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 1315 pF @ 100 V | 1315 pF @ 100 V |
| FET Feature | - | - |
| Power Dissipation (Max) | 75W (Tc) | 136W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | I-PAK | TO-220-3 |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA | TO-220-3 |
