FCP650N80Z
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onsemi FCP650N80Z

Manufacturer No:
FCP650N80Z
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FCP650N80Z Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 800V 10A TO220
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:650mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:4.5V @ 800µA
Gate Charge (Qg) (Max) @ Vgs:35 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1565 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):162W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220
Package / Case:TO-220-3
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Similar Products

Part Number FCP650N80Z FCPF650N80Z   FCP850N80Z  
Manufacturer onsemi onsemi onsemi
Product Status Active Active Active
FET Type N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V 800 V 800 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 8A (Tc) 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V
Rds On (Max) @ Id, Vgs 650mOhm @ 4A, 10V 650mOhm @ 4A, 10V 850mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 800µA 4.5V @ 800µA 4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 10 V 35 nC @ 10 V 29 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1565 pF @ 100 V 1565 pF @ 100 V 1315 pF @ 100 V
FET Feature - - -
Power Dissipation (Max) 162W (Tc) 30.5W (Tc) 136W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package TO-220 TO-220F-3 TO-220-3
Package / Case TO-220-3 TO-220-3 Full Pack TO-220-3

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