FCP600N65S3R0
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onsemi FCP600N65S3R0

Manufacturer No:
FCP600N65S3R0
Manufacturer:
onsemi
Package:
Bulk
Datasheet:
FCP600N65S3R0 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 650V 6A TO220-3
Delivery:
Payment:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id:4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs:11 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:465 pF @ 400 V
FET Feature:- 
Power Dissipation (Max):54W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FCP600N65S3R0 FCU600N65S3R0  
Manufacturer onsemi onsemi
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V 650 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc) 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 600mOhm @ 3A, 10V 600mOhm @ 3A, 10V
Vgs(th) (Max) @ Id 4.5V @ 600µA 4.5V @ 600µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 10 V 11 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 465 pF @ 400 V 465 pF @ 400 V
FET Feature - -
Power Dissipation (Max) 54W (Tc) 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 I-PAK
Package / Case TO-220-3 TO-251-3 Stub Leads, IPak

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