FCP22N60N-F102
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onsemi FCP22N60N-F102

Manufacturer No:
FCP22N60N-F102
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FCP22N60N-F102 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 22A TO220-3
Delivery:
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Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:22A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:165mOhm @ 11A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:45 nC @ 10 V
Vgs (Max):±45V
Input Capacitance (Ciss) (Max) @ Vds:1950 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):205W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
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Similar Products

Part Number FCP22N60N-F102 FCP25N60N-F102  
Manufacturer onsemi Fairchild Semiconductor
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 22A (Tc) 25A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 165mOhm @ 11A, 10V 125mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V 74 nC @ 10 V
Vgs (Max) ±45V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1950 pF @ 100 V 3352 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 205W (Tc) 216W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3

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