FCP190N60
  • Share:

onsemi FCP190N60

Manufacturer No:
FCP190N60
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FCP190N60 Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 20.2A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:20.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:199mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:74 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2950 pF @ 25 V
FET Feature:- 
Power Dissipation (Max):208W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$2.89
95

Please send RFQ , we will respond immediately.

Similar Products

Part Number FCP190N60 FCPF190N60   FCP190N60E   FCP130N60   FCP170N60  
Manufacturer onsemi onsemi onsemi onsemi Fairchild Semiconductor
Product Status Last Time Buy Active Active Active Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 20.2A (Tc) 20.2A (Tc) 20.6A (Tc) 28A (Tc) 22A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 199mOhm @ 10A, 10V 199mOhm @ 10A, 10V 190mOhm @ 10A, 10V 130mOhm @ 14A, 10V 170mOhm @ 11A, 10V
Vgs(th) (Max) @ Id 3.5V @ 250µA 3.5V @ 250µA 3.5V @ 250µA 3.5V @ 250µA 3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 74 nC @ 10 V 74 nC @ 10 V 82 nC @ 10 V 70 nC @ 10 V 55 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 2950 pF @ 25 V 2950 pF @ 25 V 3175 pF @ 25 V 3590 pF @ 380 V 2860 pF @ 380 V
FET Feature - - - - -
Power Dissipation (Max) 208W (Tc) 39W (Tc) 208W (Tc) 278W (Tc) 227W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220F-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 Full Pack TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

STL33N60M2
STL33N60M2
STMicroelectronics
MOSFET N-CH 600V 22A PWRFLAT HV
FDMS86150ET100
FDMS86150ET100
onsemi
MOSFET N-CH 100V 16A POWER56
APT56F50B2
APT56F50B2
Microchip Technology
MOSFET N-CH 500V 56A T-MAX
IXFX120N65X2
IXFX120N65X2
IXYS
MOSFET N-CH 650V 120A PLUS247-3
PMV20XNE215
PMV20XNE215
NXP USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
AUIRFR6215TRL
AUIRFR6215TRL
Infineon Technologies
MOSFET P-CH 150V 13A DPAK
LSIC1MO120G0120
LSIC1MO120G0120
Littelfuse Inc.
MOSFET SIC 1200V 18A TO247-4L
IRF740LCSTRL
IRF740LCSTRL
Vishay Siliconix
MOSFET N-CH 400V 10A D2PAK
SPB11N60S5ATMA1
SPB11N60S5ATMA1
Infineon Technologies
MOSFET N-CH 600V 11A TO263-3
IXTH102N25T
IXTH102N25T
IXYS
MOSFET N-CH 250V 102A TO247
AON6426
AON6426
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 14A/65A 8DFN
AOB2608L
AOB2608L
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 60V 11A/72A TO263

Related Product By Brand

SZNCP3712ASNT3G
SZNCP3712ASNT3G
onsemi
DIODE PROTECTION 105V SC74
SBAS40LT3G
SBAS40LT3G
onsemi
DIODE SCHOTTKY 40V 120MA SOT23-3
MPS8599RLRA
MPS8599RLRA
onsemi
TRANS PNP SS GP 80V TO92
PN3645_J05Z
PN3645_J05Z
onsemi
TRANS PNP 60V 0.8A TO92-3
FW344A-TL-2W
FW344A-TL-2W
onsemi
MOSFET N/P-CH 30V 8SOIC
RFP50N06
RFP50N06
onsemi
MOSFET N-CH 60V 50A TO220-3
FDV305N
FDV305N
onsemi
MOSFET N-CH 20V 900MA SOT23
FDMS86350ET80
FDMS86350ET80
onsemi
MOSFET N-CH 80V 25A/198A POWER56
FGH75T65SQDTL4
FGH75T65SQDTL4
onsemi
IGBT, 650 V, 75 A FIELD STOP TRE
LC79401KNE-E
LC79401KNE-E
onsemi
IC DRVR DOT MATRIX 100QIPE
LC75822WD-E
LC75822WD-E
onsemi
IC DRVR 53/104 SEGMENT 64SQFP
MC7808CDTT5
MC7808CDTT5
onsemi
IC REG LINEAR 8V 1A DPAK