FCP11N60N
  • Share:

onsemi FCP11N60N

Manufacturer No:
FCP11N60N
Manufacturer:
onsemi
Package:
Tube
Datasheet:
FCP11N60N Datasheet
ECAD Model:
-
Description:
MOSFET N-CH 600V 10.8A TO220-3
Delivery:
Payment:
iso14001
iso45001
iso9001
iso13485

Product Attributes

FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:10.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:299mOhm @ 5.4A, 10V
Vgs(th) (Max) @ Id:4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:35.6 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:1505 pF @ 100 V
FET Feature:- 
Power Dissipation (Max):94W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-220-3
Package / Case:TO-220-3
0 Remaining View Similar

In Stock

$3.33
289

Please send RFQ , we will respond immediately.

Similar Products

Part Number FCP11N60N FCP13N60N   FCP16N60N   FCP11N60   FCP11N60F  
Manufacturer onsemi onsemi onsemi onsemi onsemi
Product Status Last Time Buy Last Time Buy Last Time Buy Not For New Designs Active
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V 600 V 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10.8A (Tc) 13A (Tc) 16A (Tc) 11A (Tc) 11A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 299mOhm @ 5.4A, 10V 258mOhm @ 6.5A, 10V 199mOhm @ 8A, 10V 380mOhm @ 5.5A, 10V 380mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 35.6 nC @ 10 V 39.5 nC @ 10 V 52.3 nC @ 10 V 52 nC @ 10 V 52 nC @ 10 V
Vgs (Max) ±30V ±30V ±30V ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1505 pF @ 100 V 1765 pF @ 100 V 2170 pF @ 100 V 1490 pF @ 25 V 1490 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 94W (Tc) 116W (Tc) 134.4W (Tc) 125W (Tc) 125W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Mounting Type Through Hole Through Hole Through Hole Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3
Package / Case TO-220-3 TO-220-3 TO-220-3 TO-220-3 TO-220-3

Related Product By Categories

CSD13383F4
CSD13383F4
Texas Instruments
MOSFET N-CH 12V 2.9A 3PICOSTAR
PMZ550UNEYL
PMZ550UNEYL
Nexperia USA Inc.
MOSFET N-CH 30V 590MA DFN1006-3
NTE2382
NTE2382
NTE Electronics, Inc
MOSFET N-CHANNEL 100V 9.2A TO220
APT34N80B2C3G
APT34N80B2C3G
Microchip Technology
MOSFET N-CH 800V 34A T-MAX
IRFBF20PBF-BE3
IRFBF20PBF-BE3
Vishay Siliconix
MOSFET N-CH 900V 1.7A TO220AB
FDBL86566-F085
FDBL86566-F085
onsemi
MOSFET N-CH 60V 240A 8HPSOF
SIR876BDP-T1-RE3
SIR876BDP-T1-RE3
Vishay Siliconix
N-CHANNEL 100-V (D-S) MOSFET POW
AOD538
AOD538
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 34A/70A TO252
STF5N95K3
STF5N95K3
STMicroelectronics
MOSFET N-CH 950V 4A TO220FP
IPI070N08N3 G
IPI070N08N3 G
Infineon Technologies
MOSFET N-CH 80V 80A TO262-3
SI3454ADV-T1-GE3
SI3454ADV-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 3.4A 6TSOP
2SK3747
2SK3747
onsemi
MOSFET N-CH 1500V 2A TO3PML

Related Product By Brand

LB1939TGEVB
LB1939TGEVB
onsemi
EVAL BOARD FOR LB1939T
SZBZX84C56LT1
SZBZX84C56LT1
onsemi
DIODE ZENER
MM3Z16VT1
MM3Z16VT1
onsemi
DIODE ZENER 16V 200MW SOD323
PN4275
PN4275
onsemi
TRANS NPN 15V 0.2A TO92-3
FJX4003RTF
FJX4003RTF
onsemi
TRANS PREBIAS PNP 200MW SOT323
FQB19N20CTM
FQB19N20CTM
onsemi
MOSFET N-CH 200V 19A D2PAK
NVMFS6H801NLT1G
NVMFS6H801NLT1G
onsemi
MOSFET N-CH 80V 24A/160A 5DFN
NVMFS6B14NLT1G
NVMFS6B14NLT1G
onsemi
MOSFET N-CH 100V 11A/55A 5DFN
MMBFJ309LT1
MMBFJ309LT1
onsemi
MOSFET SS N-CHAN 25V SOT23
MC74ACT14DTR2G
MC74ACT14DTR2G
onsemi
IC INVERTER 6CH 1-INP 14TSSOP
NCP5393AMNR2G
NCP5393AMNR2G
onsemi
IC PHASE CONTROLLER 2/3/4 48-QFN
CS51413GDR8G
CS51413GDR8G
onsemi
IC REG BUCK ADJ 1.5A 8SOIC